LA3215C-UCC-CFT for the Supply of a Suite of Plasma Etcher and Plasma Deposition Tools, 4 Lots
Call for competition published on TED on 17 Jun 2026 by Education Procurement Service (EPS) (Ireland), CPV 38000000 Laboratory, optical and precision equipments (excl. glasses).
| Notice | 415187-2026 (cn-standard) |
|---|---|
| Status | Closed tender |
| Published | 17 Jun 2026 |
| Buyer | Education Procurement Service (EPS), Limerick |
| Country | Ireland |
| Main CPV | 38000000-5 Laboratory, optical and precision equipments (excl. glasses) |
| Contract type | supplies |
| Procedure | open |
| Estimated value | EUR 3,300,000 excl. VAT |
| Deadline for tenders | 17 Jul 2026 12:00 |
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Basic $19 a month, up to 5 filters. Pro $49 a month, up to 30 filters and tenders closing within 5 days. Charged in UAH at the National Bank of Ukraine rate on the payment day.
Description
Tenders are sought for the supply delivery, installation and commissioning of a suite of tools in 4 Lots for silicon-based and dielectric materials for University College Cork. The new plasma tools will enhance the capabilities at the Tyndall National Institute for the fabrication of semiconductor devices, especially silicon microelectronics and silicon MEMS, but also other materials such as germanium and silicon carbide. We invite proposals for the following lots; Lot 1 Plasma Etcher Silicon Dielectrics, advanced plasma etching system capable of etching for polysilicon poly-Si silicon dioxide SiO2 silicon nitride SiN thin films using medium high-density plasma processes. Lot 2 Plasma Etcher Metals Piezoelectrics, advanced plasma etching system capable of etching for aluminium Al and alloys molybdenum Mo aluminium scandium nitride AlScN thin films using medium high-density plasma processes. Lot 3 Plasma Etcher Slow and Controllable Rate Atomic Layer Etch for Silicon Dielectrics, advanced plasma etching system capable of both conventional high-rate etching and slow and controllable rate atomic layer etching for silicon Si silicon dioxide SiO2 silicon nitride SiN thin films using medium high-density plasma processes. Lot 4 Plasma Deposition PECVD, advanced plasma enhanced chemical vapour deposition system capable of depositing dielectric SiO2, SiN and amorphous a-Si thin films on semiconductor substrates. This equipment will be essential for etching and depositing a range of materials used in the fabrication of silicon microelectronics, silicon photonics and silicon MEMS devi
Lots (4)
| Lot | Title | Estimated value | Deadline |
|---|---|---|---|
| LOT-0001 | Plasma Etcher ,Silicon ,Dielectrics | EUR 3,300,000 | 17 Jul 2026 |
| LOT-0002 | Plasma Etcher ,Metals ,Piezoelectrics | EUR 3,300,000 | 17 Jul 2026 |
| LOT-0003 | Plasma Etcher ,Slow and Controllable Rate ,Atomic Layer Etch for Silicon , Dielectrics | EUR 3,300,000 | 17 Jul 2026 |
| LOT-0004 | Plasma Deposition ,PECVD | EUR 3,300,000 | 17 Jul 2026 |
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Daily EU tender alerts
Basic $19 a month, up to 5 filters. Pro $49 a month, up to 30 filters and tenders closing within 5 days. Charged in UAH at the National Bank of Ukraine rate on the payment day.